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1

Effective lifetime measurements in silicon-on-sapphire material by time-resolved reflectometry

A. Galeckas, V. Grivickas, M. Petrauskas, L. Frank, J.A. Tellefsen Jr.

Journal:

Thin Solid Films

Année:

1990

Langue:

english

Fichier:

PDF, 434 KB

english, 1990

2

Free-carrier absorption and luminescence decay of porous silicon

V. Grivickas, J. Linnros

Journal:

Thin Solid Films

Année:

1995

Langue:

english

Fichier:

PDF, 406 KB

english, 1995

3

Low-temperature fatigue of photoluminescence in aged porous silicon

V. Grivickas, J. Linnros, J.A. Tellefsen

Journal:

Thin Solid Films

Année:

1995

Langue:

english

Fichier:

PDF, 426 KB

english, 1995

4

Carrier lifetime investigation in 4H–SiC grown by CVD and sublimation epitaxy

P. Grivickas, A. Galeckas, J. Linnros, M. Syväjärvi, R. Yakimova, V. Grivickas, J.A. Tellefsen

Journal:

Materials Science in Semiconductor Processing

Année:

2001

Langue:

english

Fichier:

PDF, 219 KB

english, 2001

5

Determination of porous silicon film parameters by polarized light reflectance measurements

P. Basmaji, V.S. Bagnato, V. Grivickas, G.I. Surdutovich, R. Vitlina

Journal:

Thin Solid Films

Année:

1993

Langue:

english

Fichier:

PDF, 371 KB

english, 1993

6

Optical absorption in porous silicon of high porosity

Vytautas Grivickas, Pierre Basmaji

Journal:

Thin Solid Films

Année:

1993

Langue:

english

Fichier:

PDF, 493 KB

english, 1993

7

Carrier-diffusion measurements in silicon with a Fourier-transient-grating method

Linnros, Jan, Grivickas, Vytautas

Journal:

Physical Review B

Année:

1994

Langue:

english

Fichier:

PDF, 1.12 MB

english, 1994

8

Bismuth oxysulfide film electrodes with giant incident photon-to-current conversion efficiency: dynamics of properties with deposition time

Bondarenko, Evgeny, Streltsov, Eugene A, Mazanik, Alexander V., Kulak, Anatoly, grivickas, vytautas, Scajev, Patrik, Skorb, Katja

Journal:

Physical Chemistry Chemical Physics

Année:

2018

Langue:

english

Fichier:

PDF, 2.76 MB

english, 2018

9

Crystal stacking: a route to control photoelectrochemical behavior of BiOBr films

Kazyrevich, M.E., Streltsov, E.A., Malashchonak, М.V., Mazanik, A.V., Kulak, A.I., Ščajev, P., Grivickas, V.

Journal:

Electrochimica Acta

Année:

2018

Langue:

english

Fichier:

PDF, 3.91 MB

english, 2018

10

Photoconductive Switch with High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond

Hall, David L., Voss, Lars F., Grivickas, Paulius, Bora, Mihail, Conway, Adam M., Scajev, Patrik, Grivickas, Vytautas

Journal:

IEEE Electron Device Letters

Année:

2020

Fichier:

PDF, 534 KB

2020

11

Temperature Dependence of the Absorption Coefficient in 4H- and 6H-Silicon Carbide at 355 nm Laser Pumping Wavelength

A. Galeckas, P. Grivickas, V. Grivickas, V. Bikbajevas, J. Linnros

Journal:

physica status solidi (a)

Année:

2002

Langue:

english

Fichier:

PDF, 111 KB

english, 2002

12

Ion incorporation and exchange effects in porous silicon

P Basmaji, B Matvienko, V Grivickas

Journal:

Solid State Communications

Année:

1993

Langue:

english

Fichier:

PDF, 354 KB

english, 1993

13

A study of carrier lifetime in silicon by laser-induced absorption: A perpendicular geometry measurement

V. Grivickas, J. Linnros, A. Vigelis, J. Šečkus, J.A. Tellefsen

Journal:

Solid-State Electronics

Année:

1992

Langue:

english

Fichier:

PDF, 838 KB

english, 1992

14

An accurate method for determining intrinsic optical absorption in indirect band gap semiconductors

Vytautas Grivickas

Journal:

Solid State Communications

Année:

1998

Langue:

english

Fichier:

PDF, 230 KB

english, 1998

15

Relevance of the carrier transport change in porous silicon at the onset of one excited pair per crystallite

V Grivickas, J Linnros, N Lalic, J A. Tellefsen, P Grivickas

Journal:

Thin Solid Films

Année:

1997

Langue:

english

Fichier:

PDF, 319 KB

english, 1997

16

Spatially and time-resolved infrared absorption for optical and electrical characterization of indirect band gap semiconductors

V Grivickas, A . Galeckas, V Bikbajevas, J Linnros, J.A Tellefsen

Journal:

Thin Solid Films

Année:

2000

Langue:

english

Fichier:

PDF, 845 KB

english, 2000

17

Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers

V. Grivickas, J. Linnros, P. Grivickas, A. Galeckas

Journal:

Materials Science and Engineering: B

Année:

1999

Langue:

english

Fichier:

PDF, 132 KB

english, 1999

18

Investigation of surface recombination and carrier lifetime in 4H/6H-SiC

A Galeckas, J Linnros, M Frischholz, K Rottner, N Nordell, S Karlsson, V Grivickas

Journal:

Materials Science and Engineering: B

Année:

1999

Langue:

english

Fichier:

PDF, 323 KB

english, 1999

19

Properties of CdS nanocrystallites embedded in to thin ZrO2 waveguides

I. Mikulskas, E. Bernstein, J.C. Plenet, C. Bovier, R. Tomašiunas, V. Grivickas, J.V. Vaitkus, J. Mugnier, J. Dumas

Journal:

Materials Science and Engineering: B

Année:

2000

Langue:

english

Fichier:

PDF, 329 KB

english, 2000

20

Optical absorption related to Fe impurities in TlGaSe2

Vytautas Grivickas, Vladimir Gavryushin, Paulius Grivickas, Augustinas Galeckas, Vitalijus Bikbajevas, Karolis Gulbinas

Journal:

physica status solidi (a)

Année:

2011

Langue:

english

Fichier:

PDF, 685 KB

english, 2011

21

The influence of mobility on photoconductivity in cdsesingle crystals at high excitation density

R. Baltramiejūnas, V. Grivickas, J. Storasta, J. Vaitkus

Journal:

physica status solidi (a)

Année:

1973

Langue:

english

Fichier:

PDF, 213 KB

english, 1973

22

Carrier Lifetime and Material Study in Intrinsically Gettered Silicon Wafers for High Precipitate Density

V. Grivickas, V. Bikbayev, J. Šečkus, A. Vigelis, L. Frank

Journal:

physica status solidi (a)

Année:

1991

Langue:

english

Fichier:

PDF, 508 KB

english, 1991

23

Indirect absorption edge of TlGaSe2 crystals

Vytautas Grivickas, Vitalijus Bikbajevas, Paulius Grivickas

Journal:

physica status solidi (b)

Année:

2006

Langue:

english

Fichier:

PDF, 434 KB

english, 2006

24

Strong photoacoustic oscillations in layered TlGaSe2 semiconductor

Vytautas Grivickas, Vitalijus Bikbajevas, Karolis Gulbinas, Vladimir Gavryushin, Jan Linnros

Journal:

physica status solidi (b)

Année:

2007

Langue:

english

Fichier:

PDF, 457 KB

english, 2007

25

Time-resolved photoluminescence characterization of nm-sized silicon crystallites in SiO2

J Linnros, A Galeckas, N Lalic, V Grivickas

Journal:

Thin Solid Films

Année:

1997

Langue:

english

Fichier:

PDF, 291 KB

english, 1997

26

Formation of distant recombination centers in silicon by ion implantation

T. Giedrys, V. Grivickas, L. Pranevičius, A. Ragauskas, J. Vaitkus

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1985

Langue:

english

Fichier:

PDF, 385 KB

english, 1985

27

Carrier trapping and recombination in TlGaSe2 layered crystals

Vytautas Grivickas, Andrei Odrinski, Vitalijus Bikbajevas, Karolis Gulbinas

Journal:

physica status solidi (b)

Année:

2012

Langue:

english

Fichier:

PDF, 695 KB

english, 2012

28

AIP Conference Proceedings [AIP 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗ - Strasbourg, (France) (8–10 October 2010)] - Internal Stress in Freestanding 3C-SiC Grown on Si and Relation to Carrier Lifetime

Grivickas, V., Gulbinas, K., Manolis, G., Kato, M., Linnros, J., Ferro, Gabriel, Siffert, Paul

Année:

2010

Langue:

english

Fichier:

PDF, 716 KB

english, 2010

29

Radiation induced effects in CdSSe microcrystallites embedded in glass

V. Grivickas, M. Petrauskas, D. Noreika, E. Vanagas, M. Kull

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1992

Langue:

english

Fichier:

PDF, 497 KB

english, 1992

30

Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO[sub 2]

Linnros, Jan, Lalic, Nenad, Galeckas, Augustinas, Grivickas, Vytautas

Journal:

Journal of Applied Physics

Année:

1999

Langue:

english

Fichier:

PDF, 366 KB

english, 1999

31

Room-temperature photoluminescence in quasi-2D TlGaSe 2 and TlInS 2 semiconductors

Grivickas, Vytautas, Gulbinas, Karolis, Gavryushin, Vladimir, Bikbajevas, Vitalijus, Korolik, Olga V., Mazanik, Alexander V., Fedotov, Alexander K.

Journal:

physica status solidi (RRL) - Rapid Research Letters

Année:

2014

Langue:

english

Fichier:

PDF, 419 KB

english, 2014

32

Excitonic Absorption above the Mott Transition in Si

Grivickas, P., Grivickas, V., Linnros, J.

Journal:

Physical Review Letters

Année:

2003

Langue:

english

Fichier:

PDF, 212 KB

english, 2003

33

Fundamental band edge absorption in nominally undoped and doped 4H-SiC

Grivickas, P., Grivickas, V., Linnros, J., Galeckas, A.

Journal:

Journal of Applied Physics

Année:

2007

Langue:

english

Fichier:

PDF, 971 KB

english, 2007

34

Band-gap luminescence of GaP:S shock compressed to 5 GPa

Grivickas, P., McCluskey, M. D., Gupta, Y. M.

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 461 KB

english, 2008

35

Order-of-magnitude reduction of carrier lifetimes in [100] n-type GaAs shock-compressed to 4 GPa

Grivickas, P., McCluskey, M. D., Gupta, Y. M.

Journal:

Applied Physics Letters

Année:

2011

Langue:

english

Fichier:

PDF, 383 KB

english, 2011

36

Free carrier absorption and lifetime mapping in 4H SiC epilayers

Galeckas, A., Grivickas, V., Linnros, J., Bleichner, H., Hallin, C.

Journal:

Journal of Applied Physics

Année:

1997

Langue:

english

Fichier:

PDF, 491 KB

english, 1997

37

Auger recombination in 4H-SiC: Unusual temperature behavior

A. Galeckas, J. Linnros, V. Grivickas, U. Lindefelt, C. Hallin

Année:

1997

Langue:

english

Fichier:

PDF, 355 KB

english, 1997

38

Absorption saturation and photodarkening in semiconductor-doped glasses

M. Kull, J. L. Coutaz, G. Manneberg, V. Grivickas

Année:

1989

Langue:

english

Fichier:

PDF, 619 KB

english, 1989

39

Bound exciton luminescence in shock compressed GaP:S and GaP:N

Grivickas, P., McCluskey, M. D., Gupta, Y. M., Zhang, Y., Geisz, J. F.

Journal:

Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 514 KB

english, 2009

40

Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC

Galeckas, A., Linnros, J., Frischholz, M., Grivickas, V.

Journal:

Applied Physics Letters

Année:

2001

Langue:

english

Fichier:

PDF, 499 KB

english, 2001

41

Real-time band structure changes of GaAs during continuous dynamic compression to 5 GPa

Grivickas, P., McCluskey, M. D., Gupta, Y. M.

Journal:

Applied Physics Letters

Année:

2009

Langue:

english

Fichier:

PDF, 955 KB

english, 2009

42

Ambipolar diffusion coefficient in molecular-beam-epitaxy-grown silicon layers

Grivickas, V., Netiksis, V., Noreika, D., Petrauskas, M., Willander, M., Hasan, M.-A., Ni, W.-X.

Journal:

Journal of Applied Physics

Année:

1990

Langue:

english

Fichier:

PDF, 692 KB

english, 1990

43

Hydrogenated amorphous silicon films by 60 Hz glow-discharge deposition

Fragalli, J. F., Misoguti, L., Nakagaito, A. N., Grivickas, V., Bagnato, V. S., Branz, H. M.

Journal:

Journal of Applied Physics

Année:

1993

Langue:

english

Fichier:

PDF, 737 KB

english, 1993

44

Excess carrier recombination lifetime of bulk n-type 3C-SiC

Grivickas, Vytautas, Manolis, Georgios, Gulbinas, Karolis, Jarašiūnas, Kęstutis, Kato, Masashi

Journal:

Applied Physics Letters

Année:

2009

Langue:

english

Fichier:

PDF, 471 KB

english, 2009

45

Modeling of carrier lifetimes in uniaxially strained GaAs

Journal:

Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 840 KB

english, 2012

46

New contactless method for carrier diffusion measurements in silicon with a high precision

Grivickas, Vytautas, Linnros, Jan

Journal:

Applied Physics Letters

Année:

1991

Langue:

english

Fichier:

PDF, 685 KB

english, 1991

47

Indirect band-gap transitions in GaP shocked along the [100], [110], and [111] axes

Grivickas, P., McCluskey, M. D., Gupta, Y. M.

Journal:

Physical Review B

Année:

2007

Langue:

english

Fichier:

PDF, 572 KB

english, 2007

48

-band-gap semiconductor under uniaxial strain

Grivickas, P., McCluskey, M. D., Gupta, Y. M.

Journal:

Physical Review B

Année:

2009

Langue:

english

Fichier:

PDF, 109 KB

english, 2009

49

Anisotropy of band gap absorption in TlGaSe2 semiconductor by ferroelectric phase transformation

Gulbinas, Karolis, Grivickas, Vytautas, Gavryushin, Vladimir

Journal:

Applied Physics Letters

Année:

2014

Langue:

english

Fichier:

PDF, 999 KB

english, 2014

50

Evaluation of Auger Recombination Rate in 4H-SiC

Galeckas, Augustinas, Linnros, Jan, Grivickas, Vytautas, Lindefelt, Ulf, Hallin, Christer

Journal:

Materials Science Forum

Année:

1998

Fichier:

PDF, 355 KB

1998